LOLIPOP Publication | Broadband PureB Ge-on-Si Photodiodes

The LOLIPOP Project paper “Broadband PureB Ge-on-Si Photodiodes” is available online. This paper presents the fabrication of Broadband PureB Ge-on-Si photodiodes using in-situ capping of n-type Ge-islands grown by chemical vapor deposition on Si with a 10-nm-thick pure boron layer. The B-layer forms p+-like anodes with nm-shallow junctions and low dark currents, achieving near-ideal responsivities […]