The LOLIPOP Project paper “Broadband PureB Ge-on-Si Photodiodes” is available online.
This paper presents the fabrication of Broadband PureB Ge-on-Si photodiodes using in-situ capping of n-type Ge-islands grown by chemical vapor deposition on Si with a 10-nm-thick pure boron layer. The B-layer forms p+-like anodes with nm-shallow junctions and low dark currents, achieving near-ideal responsivities of 0.13, 0.37, 0.48, and 0.19 A/W at wavelengths 406, 670, 1310, and 1550 nm, respectively.
Check out the full paper for details! 📄🔗https://horizon-de-lolipop.eu/publications/
